? 2003 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 900 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 900 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 ? i cm = 24 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6g features z very high frequency igbt z new generation hdmos tm process z international standard package z high peak current handling capability applications z pfc circuit z ac motor speed control z dc servo and robot drives z switch-mode and resonant-mode power supplies z high power audio amplifiers advantages z fast switching speed z high power density 98582b(03/03) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 900 v v ge(th) i c = 250 a, v ge = v ge 2.5 5.0 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15 v 3.0 v g = gate, c = collector, e = emitter, tab = collector to-247 (ixgh) c (tab) g c e hiperfast tm igbt lightspeed tm series ixgh 12n90c v ces = 900 v ixgx 12n90c i c25 = 24 a v ces(sat) = 3.0 v t fi(typ) = 70 ns (tab) plus 247 (ixgx) g d
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 5 10 s pulse test, t 300 s, duty cycle 2 % c ies 780 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 60 pf c res 15 pf q g 33 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 10 nc q gc 12 nc t d(on) 20 ns t ri 20 ns t d(off) 135 200 ns t fi 70 180 ns e off 0.32 0.70 mj t d(on) 20 ns t ri 20 ns e on 0.15 mj t d(off) 200 ns t fi 150 ns e off 0.70 mj r thjc 1.25 k/w r thck to-247 0.25 k/w plus 247 0.15 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 22 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 22 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixgh 12n90c ixgx 12n90c to-247 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p plus 247 outline
? 2003 ixys all rights reserved v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 t j = 25 o c 7v v ge = 15v 13v 11v 9v v ge = 15v t j - degrees c -25 0 25 50 75 100 125 150 v ce (sat) - normalized 0.8 1.0 1.2 1.4 1.6 i c = 24a i c = 12a i c = 6a v ce - volts 0 5 10 15 i c - amperes 0 25 50 75 100 t j = 25 o c 13v v ge = 15v 11v 9v 7v 5v v ce - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 v ge - volts 456789101112 i c - amperes 0 5 10 15 20 25 30 35 40 45 50 55 60 t j = 125 o c t j = 25 o c t j = -40 o c v ce - volts 0246810 i c - amperes 0 10 20 30 40 50 t j = 125 o c 5v 7v v ge = 15v 13v 11v 9v ciss coss crss fig. 1. saturation voltage characteristics @ 25 o c fig. 2. extended output characteristics fig. 3. saturation voltage characteristics @ 125 o c fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves ixgh 12n90c ixgx 12n90c
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 7. dependence of e off on i c fig. 8. dependence of e off on r g fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. transient thermal resistance pulse width - seconds 0.001 0.01 0.1 1 z thjc (k/w) 0.01 0.1 1 10 v ce - volts 0 200 400 600 800 1000 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 10203040 v ge - volts 0 2 4 6 8 10 12 14 16 r g - ohms 0 102030405060 e (off) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i c - amperes 5 10152025 e (off) - millijoules 0.0 0.5 1.0 1.5 2.0 v ce = 450v i c = 12a t j = -55 to +125c r g = 10 ? dv/dt < 5v/ns single pulse r g = 10 ? t j = 125c 24 t j = 125c i c = 12a e (off) i c = 6a i c = 24a e (off) e (off) e (off) ixgh 12n90c ixgx 12n90c
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